transistor(pnp) features . low noise : nf= 1db(typ.),10db (max.) . complementary to 2sc2712. . small package. marking: so , sy , sg maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c current -continuous -150 ma p d collector power dissipation 150 mw t j junction temperature 125 t stg storage temperature -55-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100u a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-100 u a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.1 u a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 u a dc current gain h fe v ce =-6v,i c =-2ma 70 400 collector-emitter saturation voltage v ce(sat) i c =-100ma,i b =-10ma -0.3 v transition frequency f t v ce =-10v,i c =-1ma 80 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 7 pf noise figure nf v ce =-6v,i c =0.1ma, f=1khz,rg=10k ? 10 db classification of h fe rank o y gr(g) range 70-140 120-240 200-400 sot-23 1. base 2. emitter 3. collector 2sa1 1 62 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2sa1 1 62 2 date:2011/05 www.htsemi.com semiconductor jinyu
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